| PART |
Description |
Maker |
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HY5S2B6DLF-BE HY5S2B6DLF-SE HY5S2B6DLFP-SE HY5S2B6 |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
http://
|
| IS42SM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS42VM16200D-75BLI IS42VM16200D-6BLI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM
|
Integrated Silicon Solu...
|
| TC58FVT400FT-10 TC58FVT400FT TC58FVB400 TC58FVT400 |
4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| MS6334GU |
16bits Stereo Audio DAC Integrated Headphone Driver with Volume Control
|
MOSA ELECTRONICS
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16806B-I HY62LF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
